| 摘要 |
<p>The upper surface of a film to be patterned is coated with an electron-beam resist. The electron-beam resist is exposed to electron beams, and a development process is performed thereon to form a first resist pattern which delimits the shapes of a second opening and of a band-like opening with a predetermined width including the contour of a first opening. Using the first resist pattern as a mask, the film to be patterned is etched to form the band-like opening and the second opening. Thereafter, the upper surface of the film to be patterned is coated with a photoresist. Then, an exposure and development process is performed on the photoresist to form a second resist pattern which delimits the shape formed by excluding the band-like opening from the first opening. Using the second resist pattern as a mask, the film to be patterned is etched to form the first opening.</p> |
