发明名称 Thin film transistor array panel and method of manufacturing the same
摘要 <p>Disclosed is a thin film transistor array panel including a substrate, a data line (171) formed on the substrate, a gate line (121) that intersects the data line and includes a gate electrode (124), a source electrode (133) connected to the data line (171), and a drain electrode (135) facing the source electrode (133). An organic semiconductor (154) contacts the source electrode (133) and the drain electrode (135) via an insulating layer (140) having an opening (146) that defines the location of the organic semiconductor (154). The insulating layer (140) includes an acrylic photosensitive resin having a fluorine-containing compound. A method of manufacturing the above described thin film transistor array panel is disclosed.</p>
申请公布号 EP1887630(A2) 申请公布日期 2008.02.13
申请号 EP20070015152 申请日期 2007.08.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, JUNG-HAN;SONG, KEUN-KYU;CHOI, TAE-YOUNG;KIM, YOUNG-MIN;OH, JOON-HAK;CHO, SEUNG-HWAN
分类号 H01L27/32 主分类号 H01L27/32
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