发明名称 |
Radical assisted batch film deposition |
摘要 |
<p>A process for radical assisted film deposition simultaneously on multiple wafer substrates (16) is provided. The multiple wafer substrates (16) are loaded into a reactor (12) that is heated to a desired film deposition temperature. A stable species source of oxide or nitride counter ion is introduced into the reactor. An in situ radical generating reactant is also introduced into the reactor along with a cationic ion deposition source. The cationic ion deposition source is introduced for a time sufficient to deposit a cationic ion-oxide or a cationic ion-nitride film simultaneously on multiple wafer substrates. Deposition temperature is below a conventional chemical vapor deposition temperature absent the in situ radical generating reactant. A high degree of wafer-to-wafer uniformity among the multiple wafer substrates is obtained by introducing the reactants through elongated vertical tube injectors (22) having vertically displaced orifices (30), injectors surrounded by a liner having vertically displaced exhaust ports to impart across flow of movement of reactants simultaneously across the multiple wafer substrates. With molecular oxygen as a stable species source of oxide, and hydrogen as the in situ radical generating reactant, oxide films of silicon are readily produced with a silicon-containing precursor introduced into the reactor.</p> |
申请公布号 |
EP1887104(A2) |
申请公布日期 |
2008.02.13 |
申请号 |
EP20070253067 |
申请日期 |
2007.08.03 |
申请人 |
AVIZA TECHNOLOGY, INC. |
发明人 |
TREICHEL, HELMUTH;QIU, TAIQUING THOMAS;BAILEY, ROBERT JEFFREY |
分类号 |
C23C16/448;C23C16/40;C23C16/455 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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