发明名称 Semiconductor memory device having forced fail function of forcing a memory cell at a specific address to fail and method for testing same
摘要 A semiconductor memory device is provided which has a unit by which a fail bit map can be checked instantaneously over the entire address space. The semiconductor memory device is provided with a data logic forcefully controlling circuit 21 which forcefully controls the logic of write data into memory cells selected by using a specified address signal or of read data, a specified row forcefully controlling circuit 40 which forcefully makes the control of memory cells selected according to specified row addresses the control exercised during operation different from normal operation, or a specified column forcefully controlling circuit 50 which forcefully makes the control of memory cells selected according to specified column addresses the control exercised during operation different from normal operation. This forced fail operation mode is selectable aside from normal operation mode.
申请公布号 US7330379(B2) 申请公布日期 2008.02.12
申请号 US20050229771 申请日期 2005.09.20
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MOTOMOCHI KENJI;KURUMADA MAREFUSA
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址