SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A semiconductor integrated circuit device is provided to improve operation speed and to realize low power consumption by supplying an optimal power voltage to each circuit block. A first region has a first edge extended to a first direction and a second edge extended to a second direction intersected with the first direction. First MOS transistors(MN1,MP1) including circuit blocks are formed on the first region. A second region has a third edge extended to the first direction and a fourth edge extended to the second direction. The first edge of the first region is contacted to the third edge. A third region has a fifth edge extended to the first direction and a sixth edge extended to the second direction. The second edge of the first region is contacted to the sixth edge. A fourth region has a seventh edge extended to the first direction and an eighth edge extended to the second direction. The seventh edge is contacted to the fifth edge of the fifth region. The eighth edge is contacted to the fourth edge of the second region. First to third power lines are arranged on wiring layers of the second to fourth regions. Fourth and fifth power lines are arranged on a wiring layer of the first region to supply an operation voltage of the first MOS transistor and be extended to the second direction. The fourth power line is electrically connected to the first power line. The third power line is electrically connected to the fifth power line. The second power line is connected to the third power line through plural second MOS transistors. The second MOS transistors are arranged on the second region.