MEMORY DEVICE WHICH INCLUDES CIRCUIT FOR GENERATING REFRESH COMMAND AND METHOD FOR GENERATING REFRESH COMMAND

摘要

A memory device including a refresh command generation circuit and a method for generating a refresh command are provided to enable to stabilize a bit line precharge voltage and a cell plate voltage and to prevent fail during the operation of the memory device after initialization operation. A refresh generation part(300) generates a refresh generation signal for enabling refresh operation. A refresh command generation circuit generates a refresh command when more than one of the refresh generation signal and a reset signal is enabled. The refresh command generation circuit includes a reset pulse output unit(100) and a refresh command generation unit(200). The reset pulse output unit outputs a reset pulse by receiving the reset signal. The refresh command generation unit outputs a refresh command when more than one of the refresh generation signal or the reset pulse is enabled.