| 摘要 |
<p>A deposition and development apparatus is provided to improve throughput when the heating temperature of a second heating unit transferred after a second deposition unit is varied, by including a carrier having a plurality of substrates, a carrier block having an exchange unit for exchanging substrates between carriers, and a process block for developing the substrate after exposing while forming a deposition layer on a received substrate from the exchanging unit. When a wafer is sequentially transferred to a temperature control unit, a deposition unit, a heating unit, a temperature control unit, a deposition unit, a heating unit and a cooling unit, a final wafer in a lot A is processed to be changed to a heating temperature of a corresponding heating unit. A wafer heated by a heating unit is sequentially filled in a retreat unit from a next transfer cycle of a transfer cycle in which the front wafer in a lot B is transferred to a temperature control unit, following the front wafer. After the temperature of the heating unit varies, the wafer in the retreat unit is sequentially transferred to a downstream module.</p> |
