| 摘要 |
<p>A semiconductor device having improved capacitance may include a semiconductor substrate, a gate electrode on the semiconductor substrate, a capacitor lower electrode formed of substantially the same material as the gate electrode and being in the same layer as the gate electrode, an interlayer insulating film that covers the gate electrode and capacitor lower electrode, the interlayer insulating film including an opening through which the top surface of the capacitor lower electrode may be exposed, a capacitor upper electrode that fills the opening, and a dielectric film between the capacitor lower electrode and capacitor upper electrode.</p> |
