A CAPACITOR FOR A SEMICONDUCTOR DEVICE AND THE FABRICATING METHOD THEREOF

摘要

A capacitor of a semiconductor device and a fabricating method thereof are provided to increase capacitance by securing a maximum surface area in a minimum space thereof. A first electrode(101) is formed on an upper surface of a substrate(100). A first insulating layer(103) is formed on the first electrode in order to expose the first electrode partially. A second electrode(105) is formed on the first insulating layer in order to expose the first insulating layer partially. The second electrode has a size smaller than the size of the first insulating layer. A second insulating layer(107) is formed on the exposed first insulating layer and the second electrode in order to expose the second electrode partially. A third electrode(109) is formed on the exposed first electrode and the second insulating layer.