| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which has a low element resistance and an excellent luminescent characteristic, to provide a method for manufacturing the semiconductor laser element, and to provide an application system using the semiconductor laser element. SOLUTION: The semiconductor laser element contains an n-type semiconductor indicating an n-type conductive type, a p-type semiconductor indicating a p-type conductive type, and an active layer positioned between the n-type semiconductor and the p-type semiconductor. The laser element has a high resistance part which contains a donor impurity and an impurity differing from the donor impurity in a part of the n-type semiconductor, and has a higher electric resistance than a portion except the high resistance part of the n-type semiconductor. Further, the method for manufacturing the semiconductor laser element, and the application system using the semiconductor laser element are contained. COPYRIGHT: (C)2008,JPO&INPIT
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