发明名称 |
FIELD EFFECT TRANSISTOR AND METHOD OF FORMING A FIELD EFFECT TRANSISTOR |
摘要 |
A method of forming a field effect transistor comprises providing a semiconductor substrate, a gate electrode being formed over the semiconductor substrate. At least one cavity is formed adjacent the gate electrode. A strain-creating element is formed in the at least one cavity. The strain-creating element comprises a compound material comprising a first chemical element and a second chemical element. A first concentration ratio between a concentration of the first chemical element in a first portion of the strain-creating element and a concentration of the second chemical element in the first portion of the strain-creating element is different from a second concentration ratio between a concentration of the first chemical element in a second portion of the strain-creating element and a concentration of the second chemical element in the second strain-creating element.
|
申请公布号 |
US2008026531(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20070684211 |
申请日期 |
2007.03.09 |
申请人 |
BEYER SVEN;KAMMLER THORSTEN;STEPHAN ROLF;HORSTMANN MANFRED |
发明人 |
BEYER SVEN;KAMMLER THORSTEN;STEPHAN ROLF;HORSTMANN MANFRED |
分类号 |
H01L21/8234;H01L27/088 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|