| 摘要 |
PROBLEM TO BE SOLVED: To form a pnp bipolar transistor without deteriorating characteristics in the manufacturing process of a CMOSFE having a strained channel MOSFET. SOLUTION: A blocking layer for blocking the formation of a strain-imparting semiconductor region 27 in the strained channel MOSFET is formed around a base region 12C separated by an element separation layer 11, with the same process as that for forming the gate electrode section of a CMOS, thus allowing an emitter region 12E formed simultaneously with the epitaxial growth of the strain-imparting semiconductor region 27 to be subjected to epitaxial growth while being separated from the element separation layer 11. In this manner, the occurrence of defects is avoided when the emitter region 12E is formed in contact with the element separation layer 11, thus improving transistor characteristics without increasing the number of processes. COPYRIGHT: (C)2008,JPO&INPIT
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