发明名称 |
Semiconductor Method and Device with Mixed Orientation Substrate |
摘要 |
In a method of forming a semiconductor device, a wafer includes a first semiconductor region of a first crystal orientation and a second semiconductor region of a second crystal orientation. Insulating material is formed over the wafer. A first portion of the insulating material is removed to expose the first semiconductor region and a second portion of the insulating material is removed to expose the second semiconductor region. Semiconductor material of the first crystal orientation is epitaxially grown over the exposed first semiconductor region and semiconductor material of the second crystal orientation is epitaxially grown over the exposed second semiconductor region
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申请公布号 |
US2008026520(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20070868001 |
申请日期 |
2007.10.05 |
申请人 |
YAN JIANG;SUNG CHUN-YUNG;SHUM DANNY P;GUTMANN ALOIS |
发明人 |
YAN JIANG;SUNG CHUN-YUNG;SHUM DANNY P.;GUTMANN ALOIS |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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