| 摘要 |
A fabricating method of a semiconductor device is provided to improve capacitance by recessing a channel part at the time of forming a cell transistor having a three-dimension structure and recessing an active region of a reservoir capacitor during a process of forming a bulb. A fabricating method of a semiconductor device includes the steps of: forming a recess mask pattern on a cell transistor region(T) and a reservoir capacitor region(C) on a semiconductor substrate; forming a recess by etching a semiconductor substrate(110) corresponding to the cell transistor region and the reservoir capacitor region in a predetermined depth by using the recess mask pattern as an etching barrier; forming a spacer(134) on a side wall of the recess and forming a bulb by etching the recess; removing the spacer; forming a first gate insulating film(126) filling the recess; laminating a second gate insulating film(128) and a gate hard mask film(130) on the first gate insulating film; forming a gate mask pattern on the gate hard mask film; and forming a recess gate pattern in the cell transistor region and the reservoir capacitor region of the semiconductor substrate by performing gate patterning by using the gate mask pattern as the etching barrier.
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