| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus capable of obtaining high sensitivity property while attaining high speed of device operation by forming a silicide film. SOLUTION: A transfer gate 105 in each imaging pixel is so formed that a part thereof traverses above a photo diode 101. The transfer gate 105 has a region 105a in a direction along a principal surface of a semiconductor substrate 10. The transfer gate 105 has, in a region except the region 105a, a configuration wherein a gate oxide film 1051, a polysilicon film 1052 and a silicide film 1053 are laminated in this order from a bottom side. On the other hand, the region 105a where the silicide is not formed has a configuration wherein two layers of the gate oxide film 1051 and the polysilicon film 1052 are laminated. That is, a part of the region traversing above the photo diode 101 (the region 105a where the silicide is not formed) has the configure including no silicide film 1053. COPYRIGHT: (C)2008,JPO&INPIT
|
