发明名称 Semiconductor device and manufacturing method for the same
摘要 To provide a small, high-performance semiconductor device in which contact between adjacent wires is prevented for increased flexibility in designing a wiring layout, and an efficient method for manufacturing the semiconductor device. The semiconductor device includes a substrate 10 having an electrode 21 A arranged on its surface; and a first semiconductor element 11 A which includes an electrode 22 arranged on its surface and which is supported by the substrate 10 , wherein a first wire 41 is connected through a first bump 31 to at least one of the electrodes over the substrate 10 and semiconductor element 11 A (i.e., at least one of the electrodes 21 and 22 ), and a second wire 42 is connected through a second bump 32 to a bonding portion of the wire 41.
申请公布号 US2008023831(A1) 申请公布日期 2008.01.31
申请号 US20060643836 申请日期 2006.12.22
申请人 FUJITSU LIMITED 发明人 NISHIMURA TAKAO;NARISAWA YOSHIAKI
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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