发明名称 SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent connection between an air gap and a via hole in an upper wiring layer even if overlap gap of a photomask in photoengraving occurs. SOLUTION: Insulating layers 2 and 3 are formed on a base layer 1. An insulating layer 4 is formed on the insulating layers 2 and 3. A plurality of lower wiring conduction layers 5 are formed in wiring grooves 3c reaching the insulating layer 3 through the insulating layer 4. The air gap 8d is formed between the adjacent lower wiring conduction layers 5. The insulating layer 4 is arranged between the air gap 8d and the lower wiring conduction layer 5. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008021862(A) 申请公布日期 2008.01.31
申请号 JP20060193006 申请日期 2006.07.13
申请人 RENESAS TECHNOLOGY CORP 发明人 HASHIMOTO KEIJI
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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