发明名称 EVALUATION METHOD FOR PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide an evaluation method for a pattern capable of accurately evaluating a pattern. <P>SOLUTION: The method includes: a step S14 of irradiating a photomask where a pattern as a measurement object is formed with energy waves; a step S15 of detecting response waves from the photomask; a step S16 of obtaining an edge profile of the measurement object pattern from the response waves; a step S17 of obtaining a dimension of the measurement object pattern in a predetermined region from the edge profile; a step S18 of subjecting the edge profile in the predetermined region to frequency analysis to obtain intensity distribution of frequency components; and a step S19 of extracting a portion at frequencies lower than a predetermined frequency from the intensity distribution. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008020735(A) 申请公布日期 2008.01.31
申请号 JP20060193132 申请日期 2006.07.13
申请人 TOSHIBA CORP 发明人 SAITO MASATO
分类号 G03F1/84;H01L21/027 主分类号 G03F1/84
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