发明名称 |
Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the same |
摘要 |
Example embodiments may provide a doped phase change layer and a method of operating and fabricating a phase change memory with the example embodiment doped phase change layer. The phase change memory may include a storage node having a phase change layer and a switching device, wherein the phase change layer includes indium with a concentration ranging from about 5 at % to about 15 at %. The phase change layer may be a GST layer that includes indium. The phase change layer may be a GST layer that includes gallium.
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申请公布号 |
US2008023686(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20070822319 |
申请日期 |
2007.07.05 |
申请人 |
NOH JIN-SEO;KIM KI-JUN;KHANG YOON-HO;SHIN WOONG-CHUL;SUH DONG-SEOK |
发明人 |
NOH JIN-SEO;KIM KI-JUN;KHANG YOON-HO;SHIN WOONG-CHUL;SUH DONG-SEOK |
分类号 |
H01L47/00;H01L21/06 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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