发明名称 |
METHOD FOR REMOVING NANOCLUSTERS FROM SELECTED REGIONS |
摘要 |
A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.
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申请公布号 |
US2008026526(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20060459837 |
申请日期 |
2006.07.25 |
申请人 |
RAO RAJESH A;LUO TIEN YING;MURALIDHAR RAMACHANDRAN;STEIMLE ROBERT F;STRAUB SHERRY G |
发明人 |
RAO RAJESH A.;LUO TIEN YING;MURALIDHAR RAMACHANDRAN;STEIMLE ROBERT F.;STRAUB SHERRY G. |
分类号 |
H01L21/336;H01L21/3205 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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