Read disturb sensor for phase change memories

摘要

A method of operating a phase change memory array is disclosed and includes identifying a read disturb condition associated with the phase change memory array, and performing a conditional refresh operation in response to the identified read disturb condition. A phase change memory is also disclosed and includes an array of phase change memory cells, and a read disturb system configured to identify a read disturb condition and perform a refresh operation on the array in response thereto.