| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can make use of conventional design environments and requires a reduced manufacturing cost, and to provide its manufacturing method. <P>SOLUTION: The manufacturing method of the semiconductor memory device includes steps of: forming a plurality of trenches 22 on a semiconductor substrate 10; heat-treating the semiconductor substrate in a hydrogen atmosphere, thereby coupling spaces under the plurality of trenches with one another while closing upper apertures of the plurality of trenches; forming a semiconductor layer 26 provided on a cavity 25; etching the semiconductor layer on an element isolation forming region; forming an insulation film 30 on a side face and a bottom face of the semiconductor layer; filling a cavity under the semiconductor layer with an electrode material 31; forming element isolation 32 by forming the insulation film on the electrode material in the element isolation forming region; and forming a memory element MC on the semiconductor layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
