| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of easily manufacturing a highly reliable 45 nm-generation semiconductor device. <P>SOLUTION: The semiconductor device is manufactured by forming a circuit element on a semiconductor substrate, and forming a multilayer wiring to cover the circuit element. When the semiconductor device is manufactured, hard masks 100 are obtained by forming the first openings OP<SB>1</SB>, OP<SB>2</SB>of a pattern corresponding to the wiring arrangement pattern of inter-layer insulating films, and resist masks 105 are obtained by forming a second opening OP<SB>5</SB>to be intersected with the first opening when viewed from a top in response to a connection via arrangement pattern. At that time, these masks are formed on an electric insulating film to be the source of the inter-layer insulating film in this order. Via holes are formed in the electric insulating film by using the respective hard masks and resist masks as etching masks. Then, trenches for forming wiring are formed in the electric insulating film by using the hard masks as the etching masks. Then, the via holes and the trenches are embedded with the use of a conductive material, so as to respectively obtain connection vias and the wiring. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
