| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which improves the element withstanding board and reduces the trench interior width of a TLPM and has an advantage in the chip-cost aspect. SOLUTION: The trench bottom corners are each formed in an arcuate shape having a radius of curvature of 200 nm or more, a doped polysilicon layer is deposited thick enough to be used as an ion implanting mask for forming the source region, and then the doped layer is thinned to be a gate electrode at a TLPM only so that the gate electrode end contacts an oxide film on the arcuate part of the trench bottom corner. COPYRIGHT: (C)2008,JPO&INPIT
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