| 摘要 |
A test module for measuring electrical characteristics of a semiconductor device includes a plurality of shallow trench isolation (STI) layers formed over a semiconductor substrate. An active area includes not only an extended part enclosing the STI layers but also a plurality of minute line-width parts isolated by the STI layers. A gate oxide layer is formed over the STI layers and the active area. A gate electrode is formed over the STI layers and the minute line-width parts of the active area with interposing the gate oxide layer. An interlayer insulating layer, a metal wiring layer, a contact plug, and test pads allow non-destructive testing of the semiconductor device.
|
