发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>A method for manufacturing a semiconductor device is provided to form a desired shaped layer on a desired position without using a photolithography process by transferring an optical absorption layer on a substrate. A method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer on one surface of a first substrate; providing a second substrate on the light absorption layer; providing a mask on another surface of the first substrate; and transferring a part of the light absorption layer on the second substrate by irradiating a laser beam on the light absorption layer passing through the mask.</p>
申请公布号 KR20080011091(A) 申请公布日期 2008.01.31
申请号 KR20070075192 申请日期 2007.07.26
申请人 SEMICONDUCTOR ENERGY LABORATORY K.K. 发明人 MIYAIRI HIDEKAZU;SHOJI HIRONOBU;SHIMOMURA AKIHISA;HIGA EIJI;MORIWAKA TOMOAKI;YAMAZAKI SHUNPEI
分类号 H01L21/027 主分类号 H01L21/027
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