发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>A method for manufacturing a semiconductor device is provided to form a desired shaped layer on a desired position without using a photolithography process by transferring an optical absorption layer on a substrate. A method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer on one surface of a first substrate; providing a second substrate on the light absorption layer; providing a mask on another surface of the first substrate; and transferring a part of the light absorption layer on the second substrate by irradiating a laser beam on the light absorption layer passing through the mask.</p> |
申请公布号 |
KR20080011091(A) |
申请公布日期 |
2008.01.31 |
申请号 |
KR20070075192 |
申请日期 |
2007.07.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
MIYAIRI HIDEKAZU;SHOJI HIRONOBU;SHIMOMURA AKIHISA;HIGA EIJI;MORIWAKA TOMOAKI;YAMAZAKI SHUNPEI |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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