发明名称 |
HIGH VOLTAGE SILICON CARBIDE MOS-BIPOLAR DEVICES HAVING BI-DIRECTIONAL BLOCKING CAPABILITIES AND METHODS OF FABRICATING THE SAME |
摘要 |
Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided. |
申请公布号 |
EP1882273(A2) |
申请公布日期 |
2008.01.30 |
申请号 |
EP20060750425 |
申请日期 |
2006.04.18 |
申请人 |
CREE, INC. |
发明人 |
RYU, SEI-HYUNG;JENNY, JASON R.;DAS, MRINAL K.;HOBGOOD, HUDSON MCDONALD;AGARWAL, ANANT K.;PALMOUR, JOHN W. |
分类号 |
H01L29/739;H01L21/04;H01L29/06;H01L29/24 |
主分类号 |
H01L29/739 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|