发明名称 |
Nitride-based semiconductor light emitting device |
摘要 |
A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer. |
申请公布号 |
EP1883121(A2) |
申请公布日期 |
2008.01.30 |
申请号 |
EP20070113150 |
申请日期 |
2007.07.25 |
申请人 |
LG ELECTRONICS, INC.;LG INNOTEK CO., LTD. |
发明人 |
MOON, YONG TAE |
分类号 |
H01L33/06;H01L33/12;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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