GAN/GA2O3 NANO CABLES, FET USING THE NANO CABLES AND METHODES OF PRODUCING THE SAMES

摘要

GaN/Ga2O3 nano cables, an FET(Field Effect Transistor) using the nano cables and a method for producing the same are provided to integrate an element using a nano wire by forming a semiconductor/insulator in a single one dimensional nanostructure. GaN/Ga2O3 nano cables include a GaN-based nano wire and Ga2O3 coated on the surface of the GaN-based nano wire. A semiconductor/insulator structure is formed in a single one dimensional nanostructure by coating the Ga2O3 on the surface of the GaN-based nano wire. The Ga2O3 is formed by adding other element such as Al, Ti, Hf so as to improve the characteristic thereof. The Ga2O3 coating is formed by the thermal oxidation of the surface of the GaN-based nano wire.