| 摘要 |
An image sensor and a method for manufacturing the same are provided to enhance the performance of the image sensor by preventing corrosion on a photodiode area due to etching. A photoresist is formed on the other side of a photodiode area with respect to a gate electrode(120) on a substrate(100) having the photodiode area(110) and a gate electrode. An oxide layer(140) is formed on the photodiode area and a part of the gate electrode. Then, the photoresist is removed and cleaned. A first oxide layer(141) is formed on the oxide layer, the gate electrode, and the substrate. A nitride layer(150) is formed on the first oxide layer. A second oxide layer(160) is formed on the nitride layer. By executing a blank etching on the first oxide, nitride, and second oxide layers, a spacer(170) is formed on the gate electrode.
|
