发明名称 |
Plasma cleaning gas and plasma cleaning method |
摘要 |
A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.
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申请公布号 |
US7322368(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20030415101 |
申请日期 |
2003.04.30 |
申请人 |
ASAHI GLASS CO LTD;ANELVA CORP;ULVAC INC;KANTO DENKA KOGYO KK;SANYO ELECTRIC CO;SHOWA DENKO KK;SONY CORP;DAIKIN IND LTD;TOKYO ELECTRON LTD;NEC ELECTRONICS CORP;HITACHI INT ELECTRIC INC;MATSUSHITA ELECTRIC IND CO LTD;RENESAS TECH CORP;NAT INST OF ADVANCED IND SCIEN |
发明人 |
SEKIYA AKIRA;MITSUI YUKI;OHIRA YUTAKA;YONEMURA TAISUKE |
分类号 |
B08B9/093;B08B6/00;B08B7/00;B08B9/00;B44C1/22;C03C15/00;C03C25/68;C23C16/44;C23F1/00;H01L21/3065 |
主分类号 |
B08B9/093 |
代理机构 |
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代理人 |
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地址 |
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