发明名称 |
Method for manufacturing multi-thickness gate dielectric layer of semiconductor device |
摘要 |
In a method for manufacturing a multi-thickness gate dielectric layer of a semiconductor device, a first dielectric layer is formed on a semiconductor substrate. A second dielectric layer is formed using a different dielectric material from the material constituting the first dielectric layer on the first dielectric layer. A portion of the second dielectric layer is selectively removed so as to selectively expose the first dielectric layer under the second dielectric layer. A portion of the exposed first dielectric layer is selectively removed so as to selectively expose the semiconductor substrate under the exposed first dielectric layer. Thereafter, a third dielectric layer having a thinner thickness than the first dielectric layer is formed on the exposed semiconductor substrate. As a result, a gate dielectric layer is formed to include a thick portion formed of the first dielectric layer and remaining second dielectric layer, a medium-thickness portion formed of the remaining first dielectric layer, and a thin portion formed of the third dielectric layer.
|
申请公布号 |
US7323420(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20070652186 |
申请日期 |
2007.01.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KYUNG-SOO;KIM YOUNG-WUG;OH CHANG-BONG;KANG HEE-SUNG;RYU HYUK-JU |
分类号 |
H01L21/302;H01L21/336;H01L21/28;H01L21/311;H01L21/316;H01L21/318;H01L21/8244;H01L29/423;H01L29/51 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|