发明名称 METHOD AND APPARATUS FOR POLISHING
摘要 In a Chemical Mechanical Polishing flattening processing against a surface with minute bumps and dips in a semiconductor process, this invention provides a method of polishing to be able to perform selective polishing of the bumps. A laser beam is irradiated selectively on the surface of a work piece in accordance with a shape of minute bumps and dips on the surface of the work piece, thereby performing a removal control for the minute region and enabling to selectively polish particularly surface bumps.
申请公布号 KR100798831(B1) 申请公布日期 2008.01.28
申请号 KR20010055935 申请日期 2001.09.11
申请人 发明人
分类号 B24B37/00;H01L21/304;B24B37/04;B24B49/04;B24B49/12;(IPC1-7):H01L21/304 主分类号 B24B37/00
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