摘要 |
In a Chemical Mechanical Polishing flattening processing against a surface with minute bumps and dips in a semiconductor process, this invention provides a method of polishing to be able to perform selective polishing of the bumps. A laser beam is irradiated selectively on the surface of a work piece in accordance with a shape of minute bumps and dips on the surface of the work piece, thereby performing a removal control for the minute region and enabling to selectively polish particularly surface bumps. |