| 摘要 |
technology of production and alloying of inorganic substances. SUBSTANCE: proposed process can find use in microelectronics and semiconductor instrumentation. Salient feature of invention lies in use of complex crystalline substances with chain structure of crystal lattice, specifically, semiconductors TlSe and TlInSe2 in the capacity of intercalant ( implanted substance ). Intercalant substance is kept under state of melt and matrix ( intercalated crystal ) being in contact with melt is subjected to periodic heating and cooling in temperature interval between melting and solidification of intercalant substance with movement of front of hot region along matrix in forward and backward directions. Physical basis of proposed process is property of self-seeding characteristic of substances with chain structure of crystal lattice, especially for compounds TlSe and TlInSe2 and caused by heavy anisotropy of growth rates of these crystals. This property makes it possible to realize another implantation mechanism different from traditional methods by way of penetration of intercalant crystals into matrix along axis of their maximum growth rate. Invention makes it feasible to win new family of intercalated compounds. In this case time of intercalation process is sufficiently shortened, special state of intercalant in matrix when individuality of crystal lattice of intercalant substance after its implantation into matrix is maintained. EFFECT: sufficiently shortened time of intercalation process. 3 cl
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