| 摘要 |
The invention proposes a contact in integrated devises with “silicon-on –insulator” structure between metal layer through a contact window in intermediate insulator to poly-silicon gate, drain or source arias of MOS-transistor formed on the bases of “silicon-on-insulator” structures. In accordance with the utility model, dimensions of the contact window in zone of contact of metal and bus made of silicon “film -on –insulator” are more than silicon bus. A contact element of silicon bus inserts in the interlayer contact window, a contact surface of metal layer to silicon bus in three-dimensional coordinates is formed with its face and side surfaces. |
