| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN compound semiconductor laser element which can emit purple-blue light of short wavelength, in which clearance is hard to occur between an end face coat film and a GaN system crystal and which has little deterioration. SOLUTION: The gallium nitride compound semiconductor laser element 10 has the end face coat film 27 on a light emitting side end face manufactured on a substrate 11. In the light emitting side end face 26, a coat consisting of a gallium oxide layer 28 is installed between the end face coat film 27 and a waveguide end face 24, and irregularity in a range of height 0.05 to 40μm is formed on the surface of the end face except for the waveguide end face 24. COPYRIGHT: (C)2008,JPO&INPIT
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