发明名称 SUBSTRATE TREATMENT METHOD AND FILM FORMING METHOD, FILM FORMING APPARATUS, AND COMPUTER PROGRAM
摘要 There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.
申请公布号 US2008020934(A1) 申请公布日期 2008.01.24
申请号 US20070859490 申请日期 2007.09.21
申请人 TOKYO ELECTRON LIMITED 发明人 YOSHII NAOKI;MATSUZAWA KOUMEI;KOJIMA YASUHIKO
分类号 H01L39/24 主分类号 H01L39/24
代理机构 代理人
主权项
地址