| 摘要 |
A non-volatile memory cell is described, including a semiconductor body of a first conductivity type, a trapping layer, a gate, and a first to a third doped regions of a second conductivity type. The semiconductor body has a trench thereon, the trapping layer is disposed on the surface of the trench, and the gate is disposed in the trench. The first doped region is located in the semiconductor body under the trench, and the second and third doped regions are located in the semiconductor body at two sides of the trench. A non-volatile memory array based on the memory cell, a method for fabricating the memory cell and a method for fabricating the non-volatile memory array are also described.
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