| 摘要 |
A ferroelectric memory includes a base member, a first dielectric layer formed above the base member, a second dielectric layer formed above the first dielectric layer, a contact hole that penetrates the first and second dielectric layers, a plug formed in the contact hole, and a barrier layer formed above the plug, and a ferroelectric capacitor formed from a lower electrode, a ferroelectric layer and an upper electrode successively laminated in a region including above the plug. The second dielectric layer has a property that is more difficult to be polished than the plug and the first dielectric layer.
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