| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device which has resistance to an error in general such as a timing error and a software error, and is guaranteed in reading a cell value correctly, and a memory read error detection method. SOLUTION: The memory device is equipped with one or a plurality of memory cells (CL) arranged over rows and columns; a word line prepared in each row (WD); a complimentary bit line pair (BL1, BL2) comprising mutually-complementary first second bit lines prepared in each column; and a matching comparison circuit (CM) which carries out the matching comparison of the output of the complimentary bit line pair. COPYRIGHT: (C)2008,JPO&INPIT
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