| 摘要 |
<p>A chemically amplified positive photoresist composition is provided to ensure good performances such as heat resistance, remaining rate, coatability, and dry corrosion resistance and exhibit excellent resolution and improved sensitivity, profile, and depth of focus. A chemically amplified positive photoresist composition comprises a mixture obtained by mixing a super random type copolymer resin represented by the following formula 1 with a photoacid generator represented by the following formulae 2 and 3 in a weight ratio of 2.5-3 : 1. In the formula 1, R1 is hydrogen or a methyl group, R2 is a C1-10 straight or branched alkyl group or C5-10 cycloalkyl group, and each of a, b, and c is a natural number of 0-1, wherein 0.1<=c/(a+b+c)<=0.5. In the formula 2, R is a C1-10 straight or branched alkyl group, C5-10 cycloalkyl group, halogen-substituted alkyl group, C1-20 alkyl group, C1-6 alkoxy group, or halogen-substituted or unsubstituted C6-11 aryl group. In the formula 3, each of R5, R6, and R7 is independently hydrogen, a hydroxyl group, C1-6 straight or branched alkyl group, or C1-6 alkoxy group.</p> |
