| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which is equipped with stacked capacitors each having a cylinder structure, and by which short circuit can be suppressed between adjacent capacitors through HSG-Si formed near upper ends of cylinder holes. <P>SOLUTION: The method for manufacturing the semiconductor device has a process wherein silicon films 33 constituting lower electrodes are formed in several cylinder holes 31 which are formed in etch stopping films 29 and cylinder containing films 30, a process wherein barrier insulating films 34 are selectively formed on the tops of the cylinder containing films 30 and on the upper ends of silicon films 33, a process wherein hemispherical silicon grains 35 (HSG-Si) are formed on the surface of the silicon films 33, and a process wherein capacitance insulating films and upper electrodes 37 are formed in sequence on the surface of the lower electrodes 36 and on the barrier insulating films 34. <P>COPYRIGHT: (C)2008,JPO&INPIT |
