| 摘要 |
An actuator (10) is formed by sequentially stacking an intermediate layer (12), a lower conductive layer (13), an oxide layer (14), and an upper conductive layer (15) on a silicon or GaAs single crystal substrate (11). The intermediate layer (12) of magnesia spinel (MgAl2O4), the lower conductive layer (13) of a platinum-group element or its alloy, and the oxide layer (14) of a crystalline structure having a simple perovskite lattice are epitaxially grown and formed. The oxide layer (14) is composed of a crystal having a simple perovskite lattice, and its (001) surface grows epitaxially. Accordingly, the oxide layer (14) has good crystallinity, and is excellent in dielectric constant, piezoelectric property, and electrostrictive property since a voltage application direction matches the polarization axis. <IMAGE> |
