| 摘要 |
A method for manufacturing resistors in a semiconductor memory device is provided to enhance electrical characteristics of the resistors by preventing a thinning phenomenon due to over-etching of an RP layer. A conductive pattern for forming a resistor(224-1) is formed on an ambient circuit region. A conductive layer functioning as a high dielectric between the electrodes of a capacitor and the upper electrode of the capacitor is formed. By removing the conductive pattern and high dielectric, a main etching(232) for exposing the conductive pattern is formed. Then, a sub-etching for removing error factors from the conductive pattern exposed by the main etching is executed.
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