| 摘要 |
PROBLEM TO BE SOLVED: To planarize by a simple process while preventing the occurrence of dishing. SOLUTION: A polysilicon layer 13 is so formed as to cover an insulation layer 11 which is formed with a stopper film 12 on the top face. Then, a protection film 14 having a higher degree of hardness than the polysilicon layer 13 is formed on the surface of the polysilicon layer 13. Ions are implanted into the protection film 14 in projections 15 to lower the hardness in those portions. Using only a silicon polishing slurry, chemical and mechanical polishing is conducted until the stopper film 12 is exposed to planarize the surface of the polysilicon layer 13. Speeding up the polishing speed in the projections 15, the polysilicon layer 13 in concave portions 16 is protected by the protection film 14, thus preventing the occurrence of dishing. COPYRIGHT: (C)2008,JPO&INPIT |
