发明名称 |
METHOD OF FORMATION OF A DAMASCENE STRUCTURE |
摘要 |
A method in which during the formation of damascene features in a semiconductor structure, a planarization material is added to vias formed in the dielectric to protect the vias during subsequent lithographic processing. The planarization material preferred is a developable photosensitive material which can be exposed and developed to define the damascene features rather than etching as is conventional.
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申请公布号 |
US2008020327(A1) |
申请公布日期 |
2008.01.24 |
申请号 |
US20060458499 |
申请日期 |
2006.07.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;LI WAI-KIN;LIN YI-HSIUNG |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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