<p>The present application relates to a method for the growth of indium nitride on a substrate by means of MOVPE in the presence of a noble gas as growth vector.</p>
申请公布号
WO2008009805(A1)
申请公布日期
2008.01.24
申请号
WO2007FR01216
申请日期
2007.07.16
申请人
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S);UNIVERSITE DE MONTPELLIER II;RUFFENACH, SANDRA;BRIOT, OLIVIER;GIL, BERNARD
