发明名称 PAD STRUCTURE DESIGN WITH REDUCED DENSITY
摘要 An interconnect structure includes at least a first interconnect layer and a second interconnect layer. Each of the first and second interconnect layers has a pad structure and each pad structure has a respective pad density. The pad density of the pad structure of the second interconnect layer is different from the pad density of the pad structure of the first interconnect layer. The pad structures of the first and second interconnect layers are connected to each other.
申请公布号 US2008020559(A1) 申请公布日期 2008.01.24
申请号 US20060458501 申请日期 2006.07.19
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHEN HSIEN-WEI;WU ANBIARSHY;HSU SHIH-HSUN;HOU SHANG-YUN;CHEN HSUEH-CHUNG;JENG SHIN-PUU
分类号 H01L21/44 主分类号 H01L21/44
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