| 摘要 |
PROBLEM TO BE SOLVED: To provide an NOR flash memory in which writing efficiency can be enhanced by suppressing speed overshoot of hot electrons, and to provide its fabrication process. SOLUTION: The nonvolatile semiconductor storage device comprises a first conductive semiconductor substrate (1); a pair of source (2) and drain diffusion regions (3) of second conductive impurity diffusion regions formed oppositely on the surface of the semiconductor substrate; and a multilayer structure of a gate insulating film (4), a charge storage layer (5), an interlayer insulating film (6), and a control gate (7) formed sequentially in the channel region (10) on the surface of the semiconductor substrate between the source and drain diffusion regions. The junction of the source diffusion region and the channel region is formed while spaced apart from the end of the multilayer structure close to the source diffusion region. COPYRIGHT: (C)2008,JPO&INPIT
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