METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent cleavage of a gallium oxide substrate, when dividing a wafer that includes the gallium oxide substrate indicating cleaving property in two directions into individual element.

SOLUTION: The gallium oxide substrate 2 with a semiconductor layer formed thereon is divided into strips along a first cleavage surface (m) of the substrate (first dividing step) for forming a bar 20, and then the bar 20 is separated in a direction that is perpendicular to the first cleavage surface (m) (second dividing step).

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